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BSO072N03S
OptiMOSTM2 Power-Transistor
Features * Fast switching MOSFET for SMPS * Optimized technology for notebook DC/DC converters * Qualified according to JEDEC for target applications * N-Channel * Logic level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * Superior thermal resistance * Avalanche rated * Pb-free plating; RoHS compliant *Halogen-free according to IEC61249-2-21 Type BSO072N03S Package PG-DSO-8 Marking 072N3S
1)
Product Summary V DS R DS(on),max ID PG-DSO-8 30 6.8 15 V m A
Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions 10 secs Continuous drain current ID T A=25 C2) T A=70 C2) Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T A=25 C2) 2.5 T A=25 C3) I D=15 A, R GS=25 I D=15 A, V DS=20 V, di /dt =200 A/s, T j,max=150 C 15 12 60 145 6 20 1.56 -55 ... 150 55/150/56 mJ kV/s V W C Value steady state 12 9.6 A Unit
Rev. 2.0
page 1
2009-11-04
BSO072N03S
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, t p10 s minimal footprint, steady state 6 cm2 cooling area2), t p10 s 6 cm2 cooling area2), steady state Values typ. max. Unit
-
-
35
K/W
R thJA
-
-
110
-
-
150
-
-
50
-
-
80
Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=45 A V DS=30 V, V GS=0 V, T j=25 C V DS=30 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=13 A V GS=10 V, I D=15 A Gate resistance Transconductance
1) 2)
30 1.2 -
1.6 0.1
2 1
V
A
-
10 10 7.4 5.7 1 47
100 100 9.3 6.8 S nA m
RG g fs |V DS|>2|I D|R DS(on)max, I D=15 A
24
J-STD20 and JESD22
2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3)
See figure 3
Rev. 2.0
page 2
2009-11-04
BSO072N03S
Parameter Symbol Conditions min. Dynamic characteristics Thermal resistance, Thermal resistance, Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total, sync. FET Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage IS I S,pulse V SD T A=25 C V GS=0 V, I F=2.5 A, T j=25 C V R=15 V, I F=I S, di F/dt =400 A/s 0.73 2.5 60 1 V A Q gs Q g(th) Q gd Q sw Qg V plateau Q g(sync) Q oss V DS=0.1 V, V GS=0 to 5 V V DD=15 V, V GS=0 V V DD=15 V, I D=7.5 A, V GS=0 to 5 V 6.6 3.9 4.5 7.2 19 2.7 16 21 8.8 5.2 6.7 10 25 22 27 V nC nC ju C iss ju C oss C rss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=7.5 A, R G=2.7 V GS=0 V, V DS=15 V, f =1 MHz 2430 865 110 6.5 5.4 27 4.0 3230 1150 160 10 8.1 40 6.0 ns pF Values typ. max. Unit
Reverse recovery charge
Q rr
-
-
10
nC
4)
See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2009-11-04
BSO072N03S
1 Power dissipation P tot=f(T A); t p10 s 2 Drain current I D=f(T A); V GS10 V; t p10 s
3
16
2.5 12 2
P tot [W]
1.5
I D [A]
0 40 80 120 160
8
1 4 0.5
0
0 0 40 80 120 160
T A [C]
T A [C]
3 Safe operating area Thermal resistance, Thermal resistance,
102
100
4 Max. transient thermal impedance junction - solderin Z thJS=f(t p) junction - ambientparameter: D =t p/T
102
10 s 100 s
100
0.5
101
10
101
limited by on-state resistance 1 ms
10
0.2 0.1
Z thJS [K/W]
0.05
I D [A]
100
1
10 ms
100
1
0.02
10 s
0.01
10-1
0.1
10-1
DC
0.1
single pulse
10-2
0.01 0.1 1 10 100
10-2
2
0.01 0.00001 0.0001 0.001 0.01 0.1 1 10
10
-1
10
0
V DS [V]
10
1
10
10-5
10-4
10-3
t p [s]
10-2
10-1
100
101
Rev. 2.0
page 4
2009-11-04
BSO072N03S
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
50
10 V 4.5 V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
16
40 12
3.4 V 3.6 V 3.8 V 4V 4.2 V 4.5 V 5V 10 V 3V
3.2 V
R DS(on) [m]
2 3
30
3.3 V
I D [A]
8
20
3.1 V
4 10
2.8 V
2.6 V
0 0 1
0 0 10 20 30
V DS [V]
I D [A]
7 Typ. transfer characteristics Thermal resistance, Thermal resistance,
60
8 Typ. forward transconductance junction - solderin g fs=f(I D); T j=25 C junction - ambient
80
50 60 40
30
g fs [S]
125 C 25 C
I D [A]
40
20 20 10
0 0 1 2 3 4
0 0 10 20 30
V GS [V]
I D [A]
Rev. 2.0
page 5
2009-11-04
BSO072N03S
9 Drain-source on-state resistance R DS(on)=f(T j); I D=15 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D
12 2.5
10 2
450 A 98 %
8
R DS(on) [m]
V GS(th) [V]
1.5
45 A
6
typ
1
4
2
0.5
0 -60 -20 20 60 100 140 180
0 -60 -20 20 60 100 140 180
T j [C]
T j [C]
11 Typ. capacitances Thermal resistance, Thermal resistance,
104
10000
12 Forward characteristics of reverse diode junction - solderin I F=f(V SD) junction - ambientparameter: T j
102
100
150 C 25 C
Ciss
150 C, 98 %
103
Coss
1000
101
10
C [pF]
Crss
102
I F [A]
100
100
1
25 C, 98%
101
10
10-1 5 10 15 20 25 30
0.1
0
0
0.2
0.4
0.6
0.8
1
1.2
V DS [V]
V SD [V]
Rev. 2.0
page 6
2009-11-04
BSO072N03S
13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start)
100
14 Typ. gate charge V GS=f(Q gate); I D=7.5 A pulsed parameter: V DD
12
10
6V
15 V
8
25 C
24 V
10
V GS [V]
1000
I AV [A]
100 C
6
125 C
4
2
1 1 10 100
0 0 10 20 30 40
t AV [s]
Q gate [nC]
15 Drain-source breakdown voltage Thermal resistance, Thermal resistance,
36
16 Gate charge waveforms
junction - soldering point junction - ambient
V GS
34
Qg
32
30
V BR(DSS) [V]
28
26
V g s(th)
24
22
Q g(th) Q gs
-60 -20 20 60 100 140 180
Q sw Q gd
Q g ate
20
T j [C]
Rev. 2.0
page 7
2009-11-04
BSO072N03S
Package Outline PG-DSO-8
Thermal resistance, Thermal resistance,
junction - soldering point junction - ambient
Rev. 2.0
page 8
2009-11-04
BSO072N03S
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.0
page 9
2009-11-04

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